View FGH60N60SFD_4720639.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FGH60N60SFD 600V, 60A Field Stop IGBT
August 2008
FGH60N60SFD
600V, 60A Field Stop IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) =2.3V @ IC = 60A * High input impedance * Fast switching * RoHS compliant
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild's new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Applications
* Induction Heating, UPS, SMPS, PFC
E
C G
C
G
COLLECTOR (FLANGE)
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C
o o
Ratings
600 20 120 60 180 378 151 -55 to +150 -55 to +150 300
Units
V V A A A W W
o o o
C C C
Notes: 1: Repetitive test, Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.33 1.1 40
Units
o o
C/W C/W
oC/W
(c)2008 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGH60N60SFD Rev. A
FGH60N60SFD 600V, 60A Field Stop IGBT
Package Marking and Ordering Information
Device Marking
FGH60N60SFD
Device
FGH60N60SFDTU
Package
TO-247
Packaging Type
Tube
Max Qty Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 -
0.4 -
250 400
V V/oC A nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 60A, VGE = 15V IC = 60A, VGE = 15V, TC = 125oC 4.0 5.0 2.3 2.5 6.5 2.9 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2820 350 140 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 60A, VGE = 15V VCC = 400V, IC = 60A, RG = 5, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 60A, RG = 5, VGE = 15V, Inductive Load, TC = 25oC 22 42 134 31 1.79 0.67 2.46 22 44 144 43 1.88 1.0 2.88 198 22 106 62 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGH60N60SFD Rev. A
2
www.fairchildsemi.com
FGH60N60SFD 600V, 60A Field Stop IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage IF = 30A
Test Conditions
TC = 25oC TC = 125oC TC = 25oC IES = 30A, dIES/dt = 200A/s TC = 125oC
o
Min.
-
Typ.
2.0 1.8 47 179 83 567
Max
2.6 -
Units
V
Diode Reverse Recovery Time
ns
Diode Reverse Recovery Charge
TC = 25oC TC = 125 C
nC
FGH60N60SFD Rev. A
3
www.fairchildsemi.com
FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180 150
Collector Current, IC [A]
12V TC = 25 C
o
Figure 2. Typical Output Characteristics
180
TC = 125 C
o
20V
15V
20V
150
Collector Current, IC [A]
10V
15V 12V 10V
120 90 60
120 90 60 30 0
VGE = 8V
VGE = 8V
30 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8
0
2 4 6 Collector-Emitter Voltage, VCE [V]
8
Figure 3. Typical Saturation Voltage Characteristics
180 150
Collector Current, IC [A]
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
180 150
Collector Current, IC [A]
Common Emitter VCE = 20V TC = 25 C TC = 125 C
o o
TC = 25 C
o
120 90 60 30 0 0
TC = 125 C
o
120 90 60 30 0 0 1 2 3 4 Gate-Emitter Voltage,VGE [V] 5
1 2 3 4 Collector-Emitter Voltage, VCE [V]
5
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
4.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = -40 C
o
3.5
120A
16
3.0 2.5
60A
12
2.0
IC = 30A
8
120A
1.5 1.0 25
4
60A IC = 30A
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGH60N60SFD Rev. A
4
www.fairchildsemi.com
FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
o
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Collector-Emitter Voltage, VCE [V]
TC = 25 C
16
16
12
12
8
120A
8
60A IC = 30A 120A
4
4
60A IC = 30A
0
0
20
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
Figure 9. Capacitance Characteristics
6000
Common Emitter VGE = 0V, f = 1MHz TC = 25 C Cies
o
Figure 10. Gate charge Characteristics
15
Common Emitter
o
Gate-Emitter Voltage, VGE [V]
5000
Capacitance [pF]
TC = 25 C
12
300V VCC = 100V 200V
4000 3000
Coes
9
6
2000 1000
3
Cres
0
1 10 Collector-Emitter Voltage, VCE [V]
30
0
50
100 150 Gate Charge, Qg [nC]
200
Figure 11. SOA Characteristics
500 100
Collector Current, Ic [A]
10s
Figure 12. Turn off Switching SOA Characteristics
300
100
1ms 10 ms
10
1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
DC
Collector Current, IC [A]
100s
10
0.1
Safe Operating Area
0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000
1 1
VGE = 15V, TC = 125 C
o
10
100
1000
Collector-Emitter Voltage, VCE [V]
FGH60N60SFD Rev. A
5
www.fairchildsemi.com
FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Gate Resistance
300
Figure 14. Turn-off Characteristics vs. Gate Resistance
6000
Common Emitter VCC = 400V, VGE = 15V IC = 60A
100
Switching Time [ns]
Switching Time [ns]
tr
1000
TC = 25 C TC = 125 C td(off)
o
o
td(on)
Common Emitter VCC = 400V, VGE = 15V IC = 60A TC = 25 C TC = 125 C
o o
100
tf
10 0 10 20 30 40 Gate Resistance, RG [] 50
10 0 10 20 30 40 50
Gate Resistance, RG []
Figure 15. Turn-on Characteristics vs. Collector Current
500
Common Emitter VGE = 15V, RG = 5 TC = 25 C
o o
Figure 16. Turn-off Characteristics vs. Collector Current
1000
Common Emitter VGE = 15V, RG = 5 TC = 25 C
o o
Switching Time [ns]
tr
Switching Time [ns]
TC = 125 C
TC = 125 C td(off)
100
100
td(on)
tf
10 0 20 40 60 80 100 120
Collector Current, IC [A]
10 0 20 40 60 80 100 120
Collector Current, IC [A]
Figure 17. Switching Loss vs Gate Resistance
20 10
Common Emitter VCC = 400V, VGE = 15V IC = 60A
Figure 18. Switching Loss vs Collector Current
30
Common Emitter VGE = 15V, RG = 5
10
o
Switching Loss [mJ]
TC = 125 C Eon
Switching Loss [mJ]
TC = 25 C
o
TC = 25 C TC = 125 C
o
o
Eon
1
Eoff
1
Eoff
0.5 0
0.1 10 20 30 40 Gate Resistance, RG [] 50 0 20 40 60 80 100 120
Collector Current, IC [A]
FGH60N60SFD Rev. A
6
www.fairchildsemi.com
FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
200
Figure 20. Reverse Current
500 100
Reverse Current , IR [A]
100 Forward Current, IF [A]
TC = 125 C
o
TJ = 125 C
o
TJ = 25 C
o
10
TC = 75 C
o
10
TJ = 75 C
o
1
TC = 25 C TC = 125 C
o
o
0.1
TC = 25 C
o
1 0 1 2 3 Forward Voltage, VF [V] 4
0.01 0 200 400 Reverse Voltage, VR [V] 600
Figure 21. Stored Charge
500 100
Reverse Current , IR [A]
Figure 22. Reverse Recovery Time
60
Reverse Recovery Time, trr [ns]
TC = 125 C
o
200A/s
10
TC = 75 C
o
50
1
di/dt = 100A/s
40
0.1
TC = 25 C
o
0.01 0 200 400 Reverse Voltage, VR [V] 600
30 5 20 40 60
Forward Current, IF [A]
Figure 23. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2 0.1 0.05 0.02 0.01 single pulse
PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
0.01
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGH60N60SFD Rev. A
7
www.fairchildsemi.com
FGH60N60SFD 600V, 60A Field Stop IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
FGH60N60SFD Rev. A
8
www.fairchildsemi.com
FGH60N60SFD 600V, 60A Field Stop IGBT
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
TM
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) *
tm
FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
tm
PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R)
The Power Franchise(R)
tm
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM
UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I35
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FGH60N60SFD Rev. A
9
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FGH60N60SFD

	To Download FGH60N60SFD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .